super323 ? sot323 npn silicon power (switching) transistor issue 1 - september 1998 features * 500mw power dissipation *i c cont 1.5a * 5a peak pulse current * excellent h fe characteristics up to 5a (pulsed) * extremely low equivalent on resistance; r ce(sat) applications * dc-dc converter boost functions * motor drive functions device type complement partmarking r ce(sat) ZUMT617 zumt717 t61 135m w at 1.5a absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 15 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 5v peak pulse current** i cm 5a continuous collector current i c 1.5 a base current i b 200 ma power dissipation at t amb =25c* p tot 385 ? 500 ? mw operating and storage temperature range t j :t stg -55 to +150 c ? recommended p tot calculated using fr4 measuring 10 x 8 x 0.6mm (still air). ? maximum power dissipation is calculated assuming that the device is mounted on fr4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers. ZUMT617
ZUMT617 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 15 v i c = 100 m a collector-emitter breakdown voltage v (br)ceo 15 v i c = 10ma* emitter-base breakdown voltage v (br)ebo 5v i e = 100 m a collector cut-off current i cbo 10 na v cb = 10v emitter cut-off current i ebo 10 na v eb = 4v collector emitter cut-off current i ces 10 na v ces = 10v collector-emitter saturation voltage v ce(sat) 16.5 40 75 150 205 20 55 100 200 245 mv mv mv mv mv i c = 100ma, i b =10ma* i c = 250ma, i b = 10ma* i c = 500ma, i b =10ma* i c = 1a, i b =10ma* i c = 1.5a, i b =20ma* base-emitter saturation voltage v be(sat) 930 1100 mv i c = 1.5a, i b =20ma* base-emitter turn-on voltage v be(on) 865 1100 mv i c = 1.5a, v ce = 2v* static forward current transfer ratio h fe 200 300 250 200 75 30 420 450 390 300 150 75 i c = 10ma, v ce = 2v* i c = 100ma, v ce = 2v* i c = 500ma, v ce =2v* i c = 1a, v ce =2 v* i c = 3a, v ce =2v* i c =5a, v ce = 2v* transition frequency f t 180 mhz i c = 50ma, v ce = 10v f= 100mhz output capacitance c obo 15 pf v cb = 10v, f=1mhz turn-on time t (on) 50 ns v cc = 10v, i c = 1a i b1 =i b2 =100ma turn-off time t (off) 250 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2%
ZUMT617 1m 1m 1m 100m 100 1m 1m i c - collector current (a) v ce(sat) v i c 0 v ce(sat) - (v) ic/ib=10 ic/ib=50 ic/ib=100 +25c -55c h fe - typical gain +100c 0 i c - collector current (a) h fe v i c v be(on) - (v) 0 i c - collector current (a) v be(on) v i c +100c +150c v ce(sat) - (v) +25c 0 i c - collector current (a) v ce(sat) v i c +100c +150c v be(sat) - (v) +25c 0 i c - collector current (a) v be(sat) v i c 1s 100ms i c - collector current (a) 10 dc 10m v ce - collector emitter voltage (v) safe operating area 10ms 1ms 100us +25c -55c ic/ib=50 vce=2v -55c ic/ib=50 +25c +150c +100c -55c 10m 100m 1 10 0.1 0.2 0.3 0.4 0.1 0.2 0.3 0.4 10m 100m 1 10 200 400 600 800 10m 100m 1 10 10m 100m 1 10 1.0 0.25 0.5 0.75 10m 100m 1 10 0.6 0.2 0.4 0.8 1.0 110 100m 1 typical characteristics
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